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Product Data Sheet
April 25, 2003
2 - 20 GHz Power Amplifier
TGA8334-SCC
Key Features and Performance
* * * * * * * 2 to 20 GHz Frequency Range 0.4-W Output Power at 1 dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor 1.8:1 Input SWR at Midband, 1.3:1 Output SWR at Midband 8 dB Gain with +/- 1 dB Flatness 3.1750 x 1.808 x 0.1524 mm (0.125 x 0.071 x 0.006 in.)
Description
The TriQuint TGA8334-SCC is a GaAs monolithic dual-gate distributed amplifier. Small-signal gain is typically 8 dB with positive gain slope across the band. Input and output return loss is typically greater than 9.7 dB. Five 600um gatewidth FETs provide more than 26 dB output power at 1 dB gain compression at midband. Ground is provided to the circuitry through vias to the backside metallization. The TGA8334-SCC is directly cascadable with other broadband TriQuint GaAs amplifiers, such as the TGA8300-SCC, TGA8622-SCC, and TGA8220-SCC. This general power amplifier is suitable for a variety or wide-band applications such as distributed networks, logging stages and oscillator buffers. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. The TGA8334-SCC is supplied in chip form and is readily assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
April 25, 2003
TGA8334-SCC
TYPICAL OUTPUT POWER P1dB
TYPICAL SMALL-SIGNAL POWER GAIN
TYPICAL RETURN LOSS
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
April 25, 2003
TGA8334-SCC
TABLE I MAXIMUM RATINGS SYMBOL V I
+ + -
PARAMETER POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT NEGATIVE SUPPLY VOLTAGE NEGATIVE SUPPLY CURRENT GAIN CONTROL VOLTAGE RANGE
VALUE 9V IDSS -5V to 0V -29.1mA -5V to 4V 0V to -10V 7W 27dBm 150 C 320 C -65 to 150 C
0 0 0
V I
-
VCTRL VCTRL - V PD PIN
*** ** +
GAIN CONTROL VOLTAGE RANGE WITH RESPECT TO POSITIVE SUPPLY VOLTAGE POWER DISSIPATION, AT (OR BELOW) 25C * BASE-PLATE TEMPERATURE INPUT CONTINUOUS WAVE POWER OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE
TCH TM
TSTG
Ratings over channel temperature range, TCH (unless otherwise noted) Stresses beyond those listed under "Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Specifications" is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability. *For operation above 25C base-plate temperature, derate linearly at the rate of 15.2mW/C. ** Operating channel temperature, TCH, directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the lowest possible level. *** See the application note included in this data sheet that references tests on samples.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
April 25, 2003
TABLE II DC PROBE TESTS (100%) (TA = 25 C + 5 C) NOTES 2/ 2/ 1/, 3/, 7/ 1/, 4/, 7/ 1/, 2/, 5/ 1/, 2/, 5/ 1/ 2/ 3/ 4/ 5/ 6/ 7/ 8/ SYMBOL IDSS Gm |VP1| |VP2| |VBVGD| |VBVGS| TEST CONDITIONS 6/ STD STD STD STD STD STD MIN 630 300 2.3 2.3 8 8
TGA8334-SCC
LIMITS MAX 1170 600 4.1 4.1 30 30 mA mS V V V V UNITS
VP, VBVGD, and VBVGS are negative. Checked for all 5 FETs in parallel. Pinch off voltage for Gate-1 for all FETs in parallel. Pinch off voltage for Gate-2 for all FETs in parallel. Breakdown measurements tested at 1 mA/mm with a 35 V compliance limit. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer). |VP1| and |VP2|, alternatively, may be referred to as VP1 and VP2, respectively. STD refers to Standard Test Conditions, see Table IV
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
April 25, 2003
TGA8334-SCC
TABLE III RF SPECIFICATIONS (TA = 25C + 5C) V+ = 8V, I+ = 50% IDSS, VG2 = 1.0V TEST MEASUREMENT CONDITIONS MIN GAIN GAIN FLATNESS POWER OUTPUT AT 1 dB GAIN COMPRESSION INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE INPUT STANDING WAVE RATIO OUTPUT STANDING WAVE RATIO OUTPUT THIRDORDER INTERCEPT POINT F = 2 - 6 GHz F = 6 - 20 GHz F = 2 - 20 GHz F = 2 - 14 GHz F = 14 - 18 GHz F = 2 - 20 GHz F = 2 - 18 GHz F = 18 - 20 GHz F = 2 GHz F = 9 GHz F = 18 GHz F = 2 GHz F = 9 GHz F = 18 GHz F = 2 GHz F = 9 GHz F = 18 GHz 24 21 10 7.4 6.0 4.0 5.0 VALUE TYP 8.0 8.0 1 26 25 14 16.5 16.5 1.6:1 1.7:1 1.1:1 2.0:1 1.4:1 1.5:1 38 41 38 dBm dBm dBm MAX dB dB dB dBm dBm dB dB dB UNITS
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet
April 25, 2003
TGA8334-SCC
TABLE IV AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS FET Parameters IDSS : Maximum drain current (IDS) with gate voltage (VGS) at zero volts. Test Conditions VGS = 0.0 V, drain voltage (VDS) is swept from 0.5 V up to a maximum of 3.5 V in search of the maximum value of IDS; voltage for IDSS is recorded as VDSP. For all material types, VDS is swept between 0.5 V and VDSP in search of the maximum value of Ids. This maximum IDS is recorded as IDS1. For Intermediate and Power material, IDS1 is measured at VGS = VG1 = -0.5 V. For Low Noise, HFET and pHEMT material, VGS = VG1 = -0.25 V. For LNBECOLC, use VGS = VG1 = -0.10 V. VDS fixed at 2.0 V, VGS is swept to bring IDS to 0.5 mA/mm. Drain fixed at ground, source not connected (floating), 1.0 mA/mm forced into gate, gate-to-drain voltage (VGD) measured is VBVGD and recorded as BVGD; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. Source fixed at ground, drain not connected (floating), 1.0 mA/mm forced into gate, gate-tosource voltage (VGS) measured is VBVGS and recorded as BVGS; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source.
Gm : Transconductance;
(I
DSS
- IDS1
)
VG1
VP : Pinch-Off Voltage; VGS for IDS = 0.5 mA/mm of gate width. VBVGD : Breakdown Voltage, Gate-to-Drain; gate-todrain breakdown current (IBD) = 1.0 mA/mm of gate width.
VBVGS : Breakdown Voltage, Gate-to-Source; gate-tosource breakdown current (IBS) = 1.0 mA/mm of gate width.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet
April 25, 2003
TGA8334-SCC
TYPICAL S-PARAMETERS
F re que nc y (GHz) M AG S 11 ANG() M AG S 21 ANG() M AG S 12 ANG() M AG S 22 ANG() GAIN (dB)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 19.0 19.5 20.0
0.62 0.40 0.30 0.24 0.21 0.19 0.16 0.14 0.12 0.09 0.06 0.04 0.05 0.09 0.14 0.18 0.22 0.25 0.27 0.29 0.29 0.27 0.25 0.20 0.16 0.13 0.12 0.14 0.17 0.19 0.22 0.21 0.19 0.14 0.09 0.06 0.06 0.08 0.05
-67 -103 -126 -146 -163 -180 166 151 138 128 125 149 -178 -172 178 165 151 136 122 107 93 81 69 59 57 64 74 80 83 71 56 38 18 -6 -26 -37 -42 -81 -103
2.156 2.092 2.110 2.132 2.156 2.181 2.213 2.241 2.294 2.338 2.374 2.408 2.431 2.459 2.471 2.458 2.444 2.432 2.430 2.451 2.465 2.470 2.492 2.532 2.521 2.471 2.446 2.447 2.457 2.507 2.557 2.572 2.563 2.574 2.562 2.563 2.561 2.501 2.430
154 143 128 113 96 80 63 47 30 12 -6 -24 -42 -61 -79 -98 -117 -135 -153 -172 170 151 132 111 90 70 51 31 10 -11 -34 -57 -80 -104 -129 -154 151 122 94
0.001 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.009 0.009 0.009 0.009 0.008 0.008 0.008 0.009 0.010 0.011 0.012 0.013 0.014 0.014 0.012 0.007 0.004 0.003 0.006 0.007 0.007 0.007 0.005 0.006 0.009 0.012 0.015 0.015 0.015
42 65 81 80 75 66 56 46 32 18 3 -14 -27 -47 -66 -83 -100 -117 -134 -150 -165 176 155 133 107 89 89 133 134 110 80 40 1 -33 -75 -114 179 144 108
0.36 0.35 0.34 0.33 0.31 0.29 0.27 0.24 0.22 0.19 0.17 0.15 0.15 0.15 0.15 0.16 0.16 0.16 0.16 0.14 0.13 0.11 0.08 0.07 0.08 0.09 0.10 0.09 0.08 0.07 0.05 0.07 0.11 0.15 0.18 0.19 0.14 0.06 0.10
-170 171 159 150 140 133 126 120 116 115 115 118 122 124 126 125 123 120 115 109 104 97 98 115 134 133 123 114 108 107 124 150 153 147 137 122 93 102 -175
6.7 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.2 7.4 7.5 7.6 7.7 7.8 7.9 7.8 7.8 7.7 7.7 7.8 7.8 7.9 7.9 8.1 8.0 7.9 7.8 7.8 7.8 8.0 8.2 8.2 8.2 8.2 8.2 8.2 8.2 8.0 7.7
V D = 8 V, VCTRL = 1 V, I D = 50% IDSS, T A = 25oC, The reference planes for S-parameter data include bond wires as specified in the "Recommended Assembly Diagram." The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
April 25, 2003
TGA8334-SCC
THERMAL INFORMATION
P AR AM ETER TES T C ONDITION NOM UNIT
R qJ C The rmal res is ta nce (channel to bac ks ide ) V D = 8 V, ID = 50% IDS S , V CT RL = 1 V 18.7 C/W
EQUIVALENT SCHEMATIC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
April 25, 2003
TGA8334-SCC
RECOMMENDED TEST CONFIGURATION
RF INPUT
DUT
BIAS TEE
RF OUTPUT
RECOMMENDED ASSEMBLY DIAGRAM
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
9
Product Data Sheet
April 25, 2003
TGA8334-SCC
MECHANICAL DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
10
Product Data Sheet
April 25, 2003
Product Application Note
Recommended Maximum Input Power for TGA8334-SCC MMICs Background: TriQuint Semiconductor Texas has conducted tests to determine the maximum input power that can be applied to MESFET MMICs. In many applications, devices may be subjected to higher input powers than the recommended normal operating conditions. It is understood that applications at greater than recommended input power may lead to degradation of device performance. Method: Tests were performed on samples of the TGA8334 to determine a safe operating level of input power. An acceptable operating condition for input power is defined as a change of <10% in Id or a change of <1dB in gain Tests were performed for 24 hours each. Both RF device characteristics were measured before and after the devices were subjected to high input power conditions. An input power that degraded any of the above parameters in excess of the stated allowable changes in performance was considered to be an unacceptable condition. Figure 1 below illustrates the test sequence.
Device Characteristics Measured (Before Measurement)
Device Subjected to Pin = 27dBm for 24 hours
Device Characteristics Measured (After Measurement)
Figure 1 -- Device Test Flow Diagram
Results: Table 1 summarizes the DC and RF performance of the TGA8334 samples after being subjected to an input power of 27dBm for 24 hrs. All parameters remained within the acceptable degradation range. The maximum input power value that is listed on each TriQuint data sheet, reflects the acceptable input power level that may be applied without degradation in excess of that listed above. It should be noted that device MTTF may be affected by long term exposure to high input power levels. Devices operated at or near maximum value for long periods of time may experience degraded performance or failure.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
April 25, 2003
Delta Spec Change Sample 1 Sample 2 Sample 3 0.09 0.03 0.01 Gain (dB) 0 5.7 5.7 Id (%)
Table I - Typical Test Results of TGA8334 with Pin=27dBm An acceptable operating condition for input power is defined as a change of <10% in Id or a change of <1dB in gain
Table 1 illustrates that the TGA8334 devices are capable of handling 27dBm input signals for extended periods with only small degradation to RF and DC performance parameters. The mean value for catastrophic failure is near 39dBm. For additional information, please contact TriQuint Texas Applications Engineering Department at 972-994-3647.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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